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| inchange semiconductor product specification silicon npn power transistors BD433/435/437 description ? ? with to-126 package ? complement to type bd434/436/438 applications ? for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD433 22 bd435 32 v cbo collector-base voltage bd437 open emitter 45 v BD433 22 bd435 32 v ceo collector-emitter voltage bd437 open base 45 v v ebo emitter -base voltage open collector 5 v i c collector current (dc) 4 a i cm collector current-peak 7 a i b base current 1 a p c collector power dissipation t c =25 ?? 36 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors BD433/435/437 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BD433/435 0.5 v cesat collector-emitter saturation voltage bd437 i c =2a; i b =0.2a 0.2 0.6 v BD433/435 1.1 v be base-emitter on voltage bd437 i c =2a ; v ce =1v 1.2 v BD433 22 bd435 32 v ceo(sus) collector-emitter sustaining voltage bd437 i c =0.1a; i b =0 45 v BD433 v cb =22v; i e =0 bd435 v cb =32v; i e =0 i ces collector cut-off current bd437 v cb =45v; i e =0 100 | a BD433 v ce =22v; v be =0 bd435 v ce =32v; v be =0 i ces collector cut-off current bd437 v ce =45v; v be =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 1 ma BD433/435 40 h fe-1 dc current gain bd437 i c =10ma ; v ce =5v 30 130 h fe-2 dc current gain i c =0.5a ; v ce =1v 85 140 BD433/435 50 h fe-3 dc current gain bd437 i c =2a ; v ce =1v 40 f t transition frequency i c =250ma; v ce =1v 3 mhz inchange semiconductor product specification 3 silicon npn power transistors BD433/435/437 package outline fig.2 outline dimensions |
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